BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer

 

we have developed a serials of proprietary processes and technologies to fabricate

high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN

templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive

market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc

 

We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.

 

 

• Model                                                           UTI-AlN-10x10B-single crystal
• Diameter                                                           10x10±0.5mm ； or dia10mm,  dia25.4mm, or dia30mm, or dia45mm; 
• Substrate thickness (µm)                                      400 ± 50
• Orientation                                                        C-axis [0001] +/- 0.5°

     Quality Grade              S-grade(super)    P-grade(production)       R-grade(Research) 

• Cracks                                                  None                      None                                   <3mm 
• FWHM-2θXRD@(0002)                  <150                            <300                                    <500
• FWHM-HRXRD@(10-12)                 <100                         <200                                     <400
• Surface Roughness [5×5µm] (nm)          Al-face  CMP <0.5nm;     N-face(back surface) MP <1.2um; 
• Usable area                                       90%
• Absorbance                              <50 ；                   <70 ；                              <100；
• 1st  OF length orientation                                         {10-10} ±5°；
• TTV (µm)                                                                       ≤30
• Bow (µm)                                                                        ≤30
• Warp (µm)                                                                    -30~30
• Note: These characterization results may vary slightly depending on the equipments and/or software employed